An ANSTO researcher has co-authored a novel theoretical approach to explain inconsistencies between crystallographic and chemical experimental data in the apparent transformation of a pyrochlore ...

Crystallographic defects include grain boundaries, micropipes, threading screw dislocations (TSDs), threading edge dislocations (TEDs), stacking faults, and Basal plane dislocations (BPDs). In SiC, ...

These defects can significantly impact strength, toughness, and ductility. Understanding how dislocations form and their behavior is essential for improving the reliability of 3D-printed parts. “By ...

An international team of researchers, led by University of Toronto Engineering Professor Yu Zou, is using electric fields to control the motion of material defects. This work has important ...

While improvements in SiC crystal growth techniques have recently been made, managing crystallographic defect occurrences is still a significant challenge. Defects like dislocations and stacking ...

To the researchers' surprise, this crystallographic defect gives the material interesting new properties. In order for the semiconductor to emit light – speaking in descriptive terms – its electrons ...

Jun 26, 2023: Using electric fields to control the movement of defects in crystals (Nanowerk News) An international team of researchers, led by Professor Yu Zou (MSE), is using electric fields to ...

Renishaw reports on the use of its inVia confocal Raman microscope in the characterization of power semiconductor materials such as 4H-SiC. Kwansei Gakuin University is situated in the Hyogo ...

By Mary L. MatialayTROY, NY—A promising semiconductor material could be improved if flaws previously thought irrelevant to performance are reduced, according to research published ...