El Segundo, CA — International Rectifier, (IR) a global provider of power management technology, introduced the IRF6665 DirectFET MOSFET for medium power Class D audio amplifiers. The device ...

Wolfspeed C3M900V SiC MOSFET Structure and Cost Analysis Report - Research and Markets June 27, 2017 01:32 PM Eastern Daylight Time. DUBLIN-- (BUSINESS ...

Mitsubishi Electric Corporation announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor embedded with a Schottky barrier diode ...

Toshiba: X5M007E120, a bare die 1200V silicon carbide (SiC) MOSFET for automotive traction inverters with an innovative structure that deliver both low On-resistance and high reliability.

Although the development of power MOSFETs began with the V-MOS structure, the first commercially successful devices were based on the DMOS structure. B. Jayant Baliga, Founder, Silicon ...

This MOSFET product is being used by a global automaker. The new 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle's directional control through an electric motor.

The 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle’s directional control through an electric motor. ... It incorporates a rugged trench MOSFET structure in a thick gate ...

Designed for high power density in DC-DC applications, the AONK40202 provides features that meet the requirements of AI ...

The planar power MOSFET structure has been re-engineered to enhance the on-resistance and gate charge by use of a deep P + region to shield the gate and channel regions.