Toshiba announces the addition of new packages to its line-up of new-generation highly efficient transistor arrays with DMOS FET type sink-output driv ...

Better design efficiency. While previous models of DMOS and LIGBT were valid at room temperature, these were not very useful at helping manufacturers predict how the transistors work when the ...

A new generation transistor array has been launched by Toshiba Electronics Europe for applications such as LED lighting and industrial, high voltage signal transmitters. The TBD62089APG incorporates ...

Diodes Incorporated has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500 mA-rated open-drain transistors, where all their sources are connected to a common ground pin.

Figure. 12. Planar DMOS transistor cross-section. Click to Enlarge. Power Trench MOSFET Technology. For a low voltage power MOSFET device, channel conduction is best constructed utilizing a trench ...

Toshiba: “TBD62064AFG”, a DMOS FET transistor array with industry’s first 1.5A sink-output driver. (Photo: Business Wire) Mass production of TBD62064A series products is scheduled to start ...

Toshiba has brought out transistor arrays with a DMOS FET type source-output driver. The TBD62783A series succeeds the TD62783 series of bipolar transistor arrays, cutting power loss by about 40% and ...

The BCD6 process can produce monolithic super-smart power chips that can integrate on the same die 40-V/20-V power DMOS transistors, 0.35-µm CMOS 8- and 16-bit MCUs, logic circuits and ...

Figure 8. DMOS N-Channel transistor. Click to Enlarge. CMOS Transistor. When we connect the source of a PMOS transistor to a positive supply, the source of an NMOS transistor to ground, and we short ...

Diodes Incorporated (Diodes) (Nasdaq: DIOD) has introduced a new transistor array. The DIODES™ ULN62003A consists of seven 500mA-rated open-drain transistors, where all their sources are ...