In particular, we consider double-gate metal-oxide-semiconductor FETs (MOSFETs) based on arsenene and antimonene channels and compare their performance against industry requirements.

Offered in the PolarPAK package with double-sided ... the SiE726DF offers low on-resistance of 0.0024 ohms maximum at a 10-V gate ... With a Qrr of 30 nC and VSD of 0.37 V — both of which are more ...

NATIONAL SEMICONDUCTOR CORP. introduced the industry's first full-bridge pulse width modulation (PWM) controllers to integrate all four primary-side bridge MOSFET gate drivers. The LM5045 and ...