In the first part of our study, we simulate a FinFET process flow with various fin cut approaches to obtain a 3D model of a FinFET SRAM device. Layout dependent effects on silicon and process ...

Challenges for SRAM designers working with FinFET processes include the fact that the beta ratio is a quantized number; thus, fine-tuning beta is not possible. The narrower static noise margins ...

For a 128K SRAM design, the timing simulation ran 30% faster on a parasitic netlist with TICER reduction when compared to an unreduced netlist ... “Compact modeling solution of layout dependent effect ...

The Emergence of FinFET Technology With each generation of integrated circuit technology, custom physical layout becomes more and more challenging. From the days of manually cutting shapes into ...

FinFET: A Technology Primer. The FinFET’s technology roots trace back to the 1990s, when the U.S. Defense Advanced Research Projects Agency (DARPA) looked to fund research into possible ...

The process was used to build a 0.1µm2 SRAM memory cell which had 90mV noise at a 0.45V operating voltage. However TSMC is not moving on Finfets until it feels the design and layout tools are mature – ...

As part of its 14nm FinFET development process, Samsung, and its ecosystem partners – ARM, Cadence, Mentor and Synopsys – taped out multiple test chips ranging from a full ARM® Cortex™-A7 processor ...