In the first part of our study, we simulate a FinFET process flow with various fin cut approaches to obtain a 3D model of a FinFET SRAM device. Layout dependent effects on silicon and process ...

The Emergence of FinFET Technology With each generation of integrated circuit technology, custom physical layout becomes more and more challenging. From the days of manually cutting shapes into ...

Challenges for SRAM designers working with FinFET processes include the fact that the beta ratio is a quantized number; thus, fine-tuning beta is not possible. The narrower static noise margins ...

For a 128K SRAM design, the timing simulation ran 30% faster on a parasitic netlist with TICER reduction when compared to an unreduced netlist ... “Compact modeling solution of layout dependent effect ...

FinFET: A Technology Primer. The FinFET’s technology roots trace back to the 1990s, when the U.S. Defense Advanced Research Projects Agency (DARPA) looked to fund research into possible ...

That is probably one of the key reasons why scaling classic 6T planar SRAM below 22nm remains challenging. Building memories with Finfet technology is a promising alternative. Finfet devices show a ...

At 0.128 µm2, a new SRAM cell using fin-shaped FETs (FinFETs) is the smallest such cell ever developed, according to Toshiba Corp, IBM, and AMD.

Intel's 18A fabrication process features a high-density SRAM bit cell size of 0.021 µm^2 (therefore achieving an SRAM density of approximately 31.8 Mb/mm^2), which is a major improvement compared ...