The finFETs might enable engineers to sidestep a problem threatening to derail the electronics industry. New technologies will be needed for industry to keep pace with Moore's law, an unofficial rule ...

High performance (as gauged by CV/I) FinFETs have been fabricated and a comparison of conventional FETs to FinFETs shows that the structure already meets or exceeds the best reported conventional FET ...

While the FinFET structure was originally introduced in 2011 and it used vertical fins (like those of a fish) rising from the substrate, the current still flowed laterally to the substrate.

Finfet technology, with its 3D structure, is seen as the key semiconductor technology for the next generation of deep sub-micron chip design. Leah Schuth describes how physical IP developers will rise ...

If you’re a leading foundry and you’ve mastered the fabrication of fins, you’ll try to squeeze the most you can out of the FinFET. But it all depends on your manufacturing capabilities, what ...

TSMC continues utilizing FinFET structure in mass-produced 3nm products in 2H22, which will be officially released in 1H23, with the scale of mass production increasing quarter by quarter.

This design is a significant departure from the Fin Field-Effect Transistor (FinFET) structure, which has been the industry standard since Intel commercialized it in 2011.

The structure of the Si-based transistors would be changed from the fin field-effect transistor (FinFET) to the cutting-edge Stacked NanoSheet/NanoWire Gate-All-Around FETs (GAAFETs) at 3 nm node.