Gate-all-around, or GAA transistors, are a modified transistor structure where the gate contacts the channel from all sides and enables continued scaling. Such transistors are referred to as ...

Gate-all-around is the most known one,” said Efi Megged, director of product marketing at KLA. “With new chip technologies, we also have new materials, which pose new challenges. For ... “There is a ...

Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

After deposition, the film was heated to transform it into the crystalline structure needed for electron mobility. This process ultimately enabled the fabrication of a gate-all-around 'metal oxide ...

“The advantage of an all-around gate allows the creation of shorter gates, without loss of control on the current through the channel,” explains Larrieu. “We demonstrated the first vertical nanowire ...

Second, GAA transistors are surrounded by gates around all four sides. That improves the structure of a transistor by enabling a gate to contact all four sides of a transistor compared to the three ...

The 14nm, 10nm, and 7nm nodes have all used FinFETs -- vertical "fins" above the formerly 2D channel structure, which increase the contact area between transistor channel and the gate.

Gate all around goes a step further, wrapping the channel completely with the gate material -- a 3D structure that's more complicated to manufacture than the flat designs of yore.