Gate-all-around, or GAA transistors, are a modified transistor structure where the gate contacts the channel from all sides and enables continued scaling. Such transistors are referred to as ...

Metrology is proving to be a major challenge for those foundries working on processes for gate-all-around FETs at 3nm and beyond. Metrology is the art of measuring and characterizing structures in ...

Engineers from Stanford University are claiming to have broken new ground with the first post-process diamond integration of ...

After deposition, the film was heated to transform it into the crystalline structure needed for electron mobility. This process ultimately enabled the fabrication of a gate-all-around 'metal oxide ...

Gate-All-Around Transistors: In a new design, the transistor channel is made up of an array of vertical nanowires. The gate surrounds all the nanowires, which improves its ability to control the flow ...

Samsung Unveils 3nm Gate-All-Around Design Tools Samsung held its foundry forum event and detailed upcoming process nodes and improvements, including new nanosheet GAAFETs arriving for the 3nm node.

Wednesday Addams gets closer to solving the mystery when she uncovers more details about the Gates Family in 'Wednesday' Episode 6.

Gate all around goes a step further, wrapping the channel completely with the gate material -- a 3D structure that's more complicated to manufacture than the flat designs of yore.