To build their MOSFET, the researchers deposited a layer of aluminum oxide (Al2O3) at 380 degrees Celsius over an oxygen-terminated thick diamond epitaxial layer.

López-Villanueva, et al. Effects of the inversion layer centroid on MOSFET behavior. IEEE Trans. Electron Dev. 44 , 1915–1922 (1997). Article ADS Google Scholar ...

Take the switch on-resistance (R DS(ON)) of a silicon MOSFET device, for example. ... The regions include the substrate, JFET region, drift layer, and the inversion channel. 1.

If the gate-source voltage is at or above the MOSFET’s threshold voltage, sufficient electrons accumulate under the gate to create an inversion layer, forming a conductive channel across the P+ ...

When a MOSFET transistor turns on, the gate capacitor applies an electric field to the channel, creating an inversion layer. This allows minority carriers (holes in pFETs, electrons in nFETs) to flow ...