A nanowire transistor with full CMOS functionality has been fabricated without the use of junctions or doping concentration gradients.

MIT’s vertical nanowire transistors, with diameters as small as six nanometers, harness this effect to achieve unprecedented performance.

A*Star Research – A new design reduces the areal footprint of nanowire transistors by a factor of two. Researchers have now integrated two transistors onto a single vertical silicon nanowire, pushing ...

In the race to scale transistors down to the smallest possible size, the relevant research attracts a lot of money and hype. Unfortunately, the hype often obscures the real nature of any ...

Each transistor comprises a bundle of approximately 1500 nanowires, with each nanowire measuring about 500 nm in diameter. The sensors could detect pressure changes as small as 10 KPa – similar to a ...

Nanowire transistors made from silicon and germanium have been found to outperform conventional silicon ones. As transistors are the crucial switches used to control electronic circuitry this ...

A finished device: Optical microscope image of the transistor (left) and an ultra-scaled vertical nanowire (right). (Courtesy: Y Shao) A new transistor made from semiconducting vertical nanowires of ...

In these nanodevices, current flows through the nanowire or is pinched off under the control of the voltage on the gate electrode, which surrounds the nanowire. Hence, nanowire FETs’ other name: “gate ...

Researchers are closer to using semiconducting nanowires to create a new generation of small transistors and more powerful computer chips.

Nanowire bridging transistors open way to next-generation electronics Date: May 14, 2014 Source: University of California - Davis Summary: Combining atoms of semiconductor materials into nanowires ...