In SiC, crystallographic defects, including stacking faults, TSDs, and BPDs, can be detected using TEM. A scanning transmission electron microscope (STEM) can also be used for defect detection in SiC.

Imperfections of crystal structure deeply modify basic properties of the entire material and, in consequence, drastically limit its applications. Using silicon carbide as an example, Polish physicists ...

While improvements in SiC crystal growth techniques have recently been made, managing crystallographic defect occurrences is still a significant challenge. Defects like dislocations and stacking ...

Renishaw reports on the use of its inVia confocal Raman microscope in the characterization of power semiconductor materials such as 4H-SiC. Kwansei Gakuin University is situated in the Hyogo ...

The article, "Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC," is authored by Giuseppe Fisicaro, Corrado Bongiorno, Ioannis Deretzis, Filippo ...

The first results have been reported on a collaboration between ETH Zürich and Australia's Nuclear Science and Technology Organisation (ANSTO), looking at the impact of radiation on SiC devices for ...

The effect is typically less drastic than that of SiC due to the broader bandgap in SiC and elevated operating temperatures, where defects spread and result in a higher density of crystallographic and ...

31.10.2023 12:00 Unique X-ray Topography Based Defect Characterization for SiC Wafers Honored with Georg Waeber Innovation Award 2023 Amelie Schardt Presse/Media Fraunhofer-Institut für ...

The effect is typically less drastic than that of SiC due to the broader bandgap in SiC and elevated operating temperatures, where defects spread and result in a higher density of crystallographic ...