Consider a FinFET transistor with three fins, as illustrated in Figure 3. Recent research suggests that two defects types should be considered for such transistors: leakage defects that force the ...

FinFET technology is seen as the answer to fabrication processes below 20 nm. However, FinFET also presents a lot of uncertainty and concern related to defect manifestation, necessary test methods, ...

As the digital semiconductor manufacturing process moves into the FinFET era, more and more front-end-of-line (FEOL) defects are observed due to extremely small feature size and complex ...

Consider a multi-fin FinFET transistor with three fins. Recent research suggests that two defects types should be considered for such transistors: leakage defects that force the transistor partially ...

In new research, Texas A&M University scientists have for the first time revealed a single microscopic defect called a "twin" in a soft-block copolymer using an advanced electron microscopy technique.

Twin boundaries in lithium-ion batteries: Turn that defect upside down. ScienceDaily . Retrieved June 2, 2025 from www.sciencedaily.com / releases / 2015 / 05 / 150521104702.htm ...

TSMC claims N2 defect density is lower than N3 defect density two quarters before mass ... and N7/N6 — all relied on well-known FinFET transistors. So, despite being TSMC's first node using ...

Despite ditching tried and tested FinFET transistors in favour of GAA, TSMC’s N2 defect rate has dropped sharply, following a trajectory similar to the more familiar N3/N3P nodes.

Synopsys chose the International Test Conference to highlight two significant initiatives: defect-detection enhancements in TetraMAX ATPG through slack-based cell-aware test capability ...