“Indium oxide contains oxygen-vacancy defects, which facilitate carrier scattering and thus lower device stability,” says ...

One of the newest technologies is the gate-all-around MOSFET. In these devices, the substrate does not contact the channel (because the gate is all around the channel).

Gate-all-around, or GAA transistors, are a modified transistor structure where the gate contacts the channel from all sides and enables continued scaling. Such transistors are referred to as ...

“The advantage of an all-around gate allows the creation of shorter gates, without loss of control on the current through the channel,” explains Larrieu. “We demonstrated the first vertical nanowire ...