As a typical two-dimensional material, MoS2 exhibits unique optical and electrical properties due to its atomic thickness in the vertical dimension, making it a research hotspot in the field ...

Side-wall MoS 2 transistors with an atomically thin channel and a physical gate length of sub-1 nm using the edge of a graphene layer as the gate electrode Find the technical paper link here.

The ultimate thinness of the vertical p–n homogeneous junctions in MoS2 is experimentally found to be 3 nm, ... The p–n MoS 2 FET was fabricated as shown in Fig. 1. First, ...

A new technical paper titled “Exploring optimal TMDC multi-channel GAA-FET architectures at sub-1nm nodes” was published by ...

The researchers built a FET device using a semimetal Bi contact electrode with a monolayer of MoS2, which was transferred by the PPC method. Less than 0.08% of PPC residue was found to remain on ...

"Monolayer or few-layer MoS2 have a key advantage over graphene for designing an FET biosensor: They have a relatively large and uniform band gap (1.2-1.8 eV, depending on the number of layers ...

To investigate the electronic properties of a 2D FET based on single-crystalline aluminum oxide (c-Al2O3), researchers created a self-aligned MoS2 FET using a 2 nm thick layer of c-Al2O3.

IBM revealed vertical FET CMOS logic at a sub-45nm gate pitch on bulk silicon wafers at the IEEE International electron devices meeting in San Francisco this week. IBM’s VTFET with a vertical channel ...