AF114 germanium transistors and related ones like the AF115 through AF117 were quite popular during the 1960s, but they quickly developed a reputation for failure. This is due to what should have m… ...

The design and modeling of dielectric superjunction transistors using combinations of ultrahigh permittivity materials and high-mobility materials are described. We show that placing high dielectric ...

We present the first measurement results for silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) and SiGe BiCMOS circuits operating in the sub-1-K regime. Robust transistor operation of ...

The voltage was applied as a constant external electric field (E = V / Lz) imposed along the z dimension (83). Steered molecular dynamics simulations Steered molecular dynamics (SMD) simulations were ...

Although carbon nanotube (CNT) transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will ...

One of the prototypical organic electronic devices is the field-effect transistor (FET), which has been widely used in many electronic devices, including displays, (1−5) sensors, (6−8) imagers, (9,10) ...