To alleviate the problem of low hole injection efficiency in deep ultraviolet light-emitting diodes (DUV LED), an undoped AlInGaN graded hole reservoir layer is designed in this paper to improve the ...

State-of-the-art perovskite–perovskite tandem solar cells incorporate a water-based poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS) hole transport layer in its low bandgap subcell.

An InGaN/GaN superlattice (SL) with Mg-doped barriers was designed and inserted into the InGaN-based blue light-emitting diodes (LEDs) as a hole gathering layer (HGL) to promote hole injection into ...