Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

In this letter, an ultrafast and universal short-circuit protection (SCP) method is proposed for silicon carbide metal–oxide–semiconductor field-effect transistors based on gate current detection.

Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 ...

Bipolar degradation constitutes a significant long-term reliability concern that can affect the durability of Silicon Carbide (SiC) devices. In this study, the application of a large constant current ...