Assessment of proper material specifications at the substrate level is mandatory for successful high-performances SiC power devices. However, SiC defects must be screened during device fabrication ...

A new study by Professor Tao Sun tracks the evolution of crystallographic defects in real time during metal additive manufacturing.

Residual strain makes the internal deformation of metal uneven, dislocation, vacancy and other Crystallographic defect increase, and residual internal stress will be generated in the metal.

Dr. Mitsutaka Haruta (presently, in NIMS) and Assoc. Prof. Horoki Kurata (Institute for Chemical Research) demonstrated the direct observation of molecular column in organic crystals using a scanning ...

Defects in multicrystalline silicon wafers after saw-damage etch (SDE) for different etch durations are characterized nondestructively using scanning electron acoustic microcopy (SEAM). SEAM is shown ...

Even after two decades of research, conventional 111 B oriented III–V nanowires are often perturbed by twins and stacking faults that form perpendicular to their growth direction and span the ...

This article explores the preparation of ultra-thin TEM specimens for highly-accurate S/TEM crystallographic characterization.

In materials science, dislocation is a linear crystallographic defect within a crystal structure that contains an abrupt change in the arrangement of atoms.

This article discusses using particle size analysis techniques to detect defects in silicon carbide (SiC), a wide-bandgap semiconductor used in microelectronic devices.