Scientists at St. Jude Children's Research Hospital have reconciled two closely related but contentious mechanisms underlying ...

UF engineers, backed by DARPA and NASA, are perfecting laser-forming techniques that let metal sheets fold themselves into ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Power modules are great for high-power applications, but discrete MOSFETs offer many benefits, making them viable for the ...

A 1200-V rated CoolSiC Trench MOSFET structure has excellent overall electrical characteristics due to its unique asymmetric structure. However, it is sensitive to space heavy ion radiation. In this ...

The 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle’s directional control through an electric motor. The device adheres to rigorous AEC-Q101 standards and guarantees a ...

This MOSFET product is being used by a global automaker. The new 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle's directional control through an electric motor.

Table 1. Device structure of FD SOI n-MOSFET at different gate length. Table 2. Electrical characteristics of FD SOI n-MOSFET at different gate length. Figures 5 (a)- (d) show the subthreshold slope ...

Toshiba Releases 600V Super Junction Structure N-Channel Power MOSFET that Helps to Improve Efficiency of Power Supplies Toshiba: 600V N-channel power MOSFET TK055U60Z1 in the DTMOSVI Series.

Mitsubishi Electric Corporation announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor embedded with a Schottky barrier diode ...