Mitsubishi Electric Corporation announced today that it has developed a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor embedded with a Schottky barrier diode ...

El Segundo, CA — International Rectifier, (IR) a global provider of power management technology, introduced the IRF6665 DirectFET MOSFET for medium power Class D audio amplifiers. The device ...

Figure 2: Superjunction MOSFET Structure. Figure 3: Blocking Voltage and On-resistance Comparison for Planar and Superjunction MOSFETs. Figure 2 shows the physical structure of superjunction MOSFETs ...

Wolfspeed C3M900V SiC MOSFET Structure and Cost Analysis Report - Research and Markets June 27, 2017 01:32 PM Eastern Daylight Time. DUBLIN-- (BUSINESS ...

Although the development of power MOSFETs began with the V-MOS structure, the first commercially successful devices were based on the DMOS structure. B. Jayant Baliga, Founder, Silicon ...

Mitsubishi Electric Develops Trench-type SiC-MOSFET with Unique Electric-field-limiting Structure Will contribute to smaller and more energy-efficient power electronic equipment September 29, 2019 ...

This MOSFET product is being used by a global automaker. The new 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle's directional control through an electric motor.

The 30V MXT LV MOSFET provides a stable power supply to EPS, assisting a vehicle’s directional control through an electric motor. ... It incorporates a rugged trench MOSFET structure in a thick gate ...