On-wafer transmission line pulsing (TLP) measurements and transient interferometric mapping experiments on vertically integrated DMOS transistors reveal the presence of hot filament hopping between ...

Sponsored by Texas Instruments: A new family of GaN power stages plus an advanced eFuse current-limit approach helps designers achieve safe, high power for modern data centers ...

Polar Semiconductor in the US has finalized an agreement to license the robust TS18PM power process from Tower Semiconductor.

This agreement is further industry recognition that ReRAM is the non-volatile memory solution best positioned to replace traditional flash storage, with Weebit being a leading independent provider of ...

Picking some examples, compared with the company’s earlier 180nm nominally 3.3V BCD process, ICs will be 0.45x smaller, have improved threshold matching, lower poly resistor shows mismatch coefficient ...

BCD (Bipolar CMOS DMOS) is a process used to drive high voltage components and is widely used in a variety of applications like audio amplifiers, RF (radio frequency), and automotive industry. It is a ...

DMOS stands out with its comprehensive cloud operating system design, decentralized ecosystem, support for non-containerized applications, and simplified user experience.

The wider adoption of power GaN devices at voltages above 650 V necessitates innovations in both the substrate and integration process of the lateral high-electron-mobility transistor (HEMT) and ...

Scientists have created an n-channel transistor using diamond for the first time, potentially leading to faster components that can work in extreme conditions.