The double-gate SOI structure is believed to be the most scalable technology down to the 0.02/spl mu/m regime. However, experimental study of double-gate related phenomena has been hindered by the ...

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In this paper, a comparison between Single Gate Fully Depleted SOI (SGSOI) and Double Gate Fully Depleted SOI (DGSOI) MOSFET with Si3N4 Spacer (insulator) around the Gate electrode at various ...