Double gate MOSFET is one of the most promising and leading contender for nano regime devices. In this paper we investigate the impact of different gate dielectric on performance of DG-MOSFET.

The double-gate SOI structure is believed to be the most scalable technology down to the 0.02/spl mu/m regime. However, experimental study of double-gate related phenomena has been hindered by the ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Considerable research efforts have been devoted to promoting memory performance, especially the memory window and retention time. In this work, we develop an innovative field-effect-transistor memory ...