In this paper, the impact of interface charges on the performance of a short-channel symmetric dielectric pocket double-gate (DP-DG) MOSFET has been investigated. An analytical drain current model for ...

Double gate MOSFET is one of the most promising and leading contender for nano regime devices. In this paper we investigate the impact of different gate dielectric on performance of DG-MOSFET.

The low figure of merit and enhanced packaging of Toshiba’s new MOSFETs contribute to higher efficiency in high-voltage power ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

The West Gate Tunnel is set to cost almost double its initial $6.3bn budget, with Transurban officially informing the Allan government of fresh blowouts its builders expect to top $1.5bn.

Josh Mullan, 23, was caught double gating on March 14 at Tottenham Court Road, and he told TfL officer Emmanuel Sempa he had done it because his phone had “died”. He added: “I could not pay.” ...

Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...

Considerable research efforts have been devoted to promoting memory performance, especially the memory window and retention time. In this work, we develop an innovative field-effect-transistor memory ...