This paper describes a dual-band (C/X) high power amplifier realised with Leonardo's 0.25 μm GaN on SiC technology. Design considerations are provided to implement dual-band operation. The measured ...

For this, we have observed the effects of different ITCs on both conventional dual material control gate tunnel field effect transistor (DMCG-TFET) and dual-material gate-oxidestack double-gate TFET ...