A novel RF small-signal model in the form of a physics-based equivalent circuit for advanced bulk FinFETs is proposed. Based on the unique multifin structure, parallel resistance-capacitance branches ...

The performance of an evolutionary FinFET design (iFinFET) is compared against that of the bulk FinFET and gate-all-around (GAA) FET via TCAD three-dimensional device simulations. The results show ...