The TA1165 is a Class AB gallium nitride (GaN)-based amplifier delivering up to 20 W of RF output power across the 5.5 GHz to ...

A research team affiliated with UNIST has unveiled a new semiconductor device optimized for the next-generation 6G era and ...

The relationships between device feature size and device performance figures of merit (FoMs) are more complex for radio frequency (RF) applications than for digital applications. Using the devices in ...

Direct write printing is restricted by the lack of dielectric materials that can be printed with high resolution and offer dissipation factors at radio frequency (RF) within the range of commercial RF ...

A specific frequency dependence of reactance of negative inductances and capacitances give opportunities to overcome limitations of conventional RF and microwave devices with regard to the operational ...

As demand grows for non-surgical aesthetic procedures, Mansfield Cosmetic Surgery Center has released a comprehensive new ...