Technology computer-aided design (TCAD) simulations are used to clarify the underlying mechanisms affecting single-event upset (SEU) results at 7-, 5-, and 3-nm bulk FinFET technologies using ...

This paper presents a comprehensive study on the mapping of stress and strain in FinFETs and explores its implications for device performance. The investigation focuses on the characterization of ...

One of the sensitivities is related to carrier mobility dependence on mechanical stress, modulated by device design and local/ global environment. In this paper we investigate the impact of stress, ...