This paper presents a comprehensive study on the mapping of stress and strain in FinFETs and explores its implications for device performance. The investigation focuses on the characterization of ...

ABSTRACT: Based on the binary MOSFET and FinFET field-effect transistors, we have respectively designed ternary 0, +1, −1 digital signals using the improved MOSFET and FinFET field-effect transistors.

Among diverse transistor structures have been investigated, nanosheet field-effect transistors (NS-FETs) (Loubet et al., 2017; Hook, 2018), are expected to be alternative to FinFET technology, ...

He has worked on various technology nodes, including 7nm, 10nm, 16nm, 40nm, 65nm, 130nm and 180nm in analog layout design. Bhanu Rathore: The author has over 10 years of experience in the ...

(27:57 + Q&A) Brandon Wang, SynopsisFrom the First IEEE Hybrid Bonding Symposium Summary: The talk will cover the challenges in chiplet design, and dive deep to design enablement, implementation ...

Bandgap and stress engineering using group IV materials-Si, Ge, and Sn, and their alloys are employed to design a FinFET-based CMOS solution for the 7-nm technology node and beyond. A detailed ...

Ceva has added Bluetooth High Data Throughput (HDT) to IEEE 802.15.4 for Zigbee, Thread and Matter in radio intellectual property aimed at TSMC’s FFC+ 12nm finfet semiconductor process. “Ceva-Waves ...

Even before AI entered the picture, Computer-Aided Design (CAD) and other types of Electronic Design Automation (EDA) tools revolutionized the field. They allow chip designers to generate fast ...

So, when comparing the power, performance, area of a FinFET to a nanosheet transistor at the same dimensions, you will see the FinFET starts tanking in performance at about the 2-nm node.

How FinFET Has Combated ESD Minimizing the influences of ESD requires viewing FinFET from several perspectives. Improvements happen through design, compliance updates, material choices, and simulation ...