Navitas Semiconductor has announced a new family of GaNSense Motor Drive ICs targeting home appliances and industrial drives ...

Infineon’s 750-V CoolSiC G2 MOSFETs enhance system efficiency and power density in automotive and industrial power conversion ...

The low R DS(on) values 4 and 7 mΩ enable high performance in static-switching applications, making the MOSFETs a suitable ...

The Miller clamp circuit has a channel resistance of 0.69Ω (typ.) and a peak clamp sink current rating of 6.8A. These ...

Littelfuse has introduced a 200V half-bridge mosfet and IGBT driver with integrated cross-conduction protection logic, said the company. IXD2012NTR, as it ...

Abstract: This study deals with 40-kV active pull-down pulsed-power modulator for driving plasma reactor in gas abatement. Plasma reactors for industrial gas processing have capacitive load ...

Developed by STMicroelectronics, the quasi-resonant offline converter integrates a 700-V gallium-nitride (GaN) transistor and an optimized gate driver that can operate at up to 240 kHz with ...

Infineon’s latest EDT3 IGBT chip technology is now integrated into the HybridPACK™ Drive G2 automotive power module. Infineon Technologies AG is addressing the increasing demand for high-voltage IGBT ...

The device is a programmable gate driver SoC for control of an external power bridge with six N-channel FETs to drive actuators, fans, and pumps. The SoC is compatible with the existing HVC 5x family ...

In addition to advances in 6-inch diameter SiC and 8- and 12-inch silicon wafer production, the company will show examples of new IGBT/FRD, RC-IGBT and SiC ... featuring an integrated microcontroller ...

A Sarnia man is charged with impaired driving and resisting arrest after a pickup truck crashed through a security gate at Imperial ... He was identified by his driver’s licence and was taken ...

Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, South Korea ...