In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

With the advent of post-Moore era, the development of memory devices based on bulk materials gradually entered the bottleneck period. Two-dimensional (2D) materials have received much attention due to ...

The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...

The heavy-ion induced electron/hole charge yield in silicon-oxide versus electric field is presented. The heavy-ion charge yield was determined by comparing the voltage shifts of MOSFET transistors ...

But these transistors avoided major overheating issues thanks to their smart design. Temperature rose to around 283 degrees Celsius during use—hot, but still safe for GaN-based electronics.

Moreover, 2-MeTHF-processed organic thin film transistors (OTFTs) based on these polymers exhibited a higher n-type transport performance. Notably, the P2 -based device afforded the maximum electron ...

In fact, our MOSFET outperformed similar devices that have previously been reported." The efforts shown by the team have provided the field with a new transistor design that considers the ...