Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...

But these transistors avoided major overheating issues thanks to their smart design. Temperature rose to around 283 degrees Celsius during use—hot, but still safe for GaN-based electronics.

In fact, our MOSFET outperformed similar devices that have previously been reported." The efforts shown by the team have provided the field with a new transistor design that considers the ...

Microwaves can control a single quantum bit more precisely than ever before, creating a device similar to a quantum transistor – and potentially making quantum computers more reliable ...

Specifically, the researchers operate a transistor under what are called "punch-through conditions." This happens when charges build up in a semiconductor in a way that can allow bursts of current ...

Full access to articles dating back to 2000. Real-time access to the news as it breaks. Access to premium content. Full access to Tomorrow's Headlines. Asia Supply Chain 250 dataset access.

The typical BCD technology offers low voltage logic CMOS transistors, high voltage transistors, diodes, resistors, and MIM capacitors in the same process. The BCD process has parasitic bipolar ...

The result was the world’s first working n-channel MOSFET transistor made using diamond. The researchers then put the transistor through a series of tests to check for conductivity performance.

The size of almost an entire 12-inch wafer, like its predecessor, the WSE-3 has shrunk its transistors from 7 nanometers -- seven billionths of a meter -- to 5 nanometers, boosting the transistor ...