Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching ...

EMI becomes unavoidable owing to the high frequency of power electronics. In order to predict and reduce the influence of EMI, a precise high frequency model of power MOSFET needs to be established to ...