Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

A compact model for SiC Power MOSFETs is presented. The model features a physical description of the channel current and internal capacitances and has been validated for dc, CV, and switching ...

EPC Space has introduced the EPC7030MSH, a 300 V radiation-hardened (RH) gallium nitride (GaN) field-effect transistor (FET) that sets a new benchmark for performance in high-voltage, high-power space ...

Alpha and Omega Semiconductor Limited introduced its AONK40202 25V MOSFET in state-of-the-art DFN3.3×3.3 Source-Down packaging technology. Designed for high power density in DC-DC applications, the ...

Alpha and Omega Semiconductor (AOS) has introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology. Designed for high power density in DC-DC applications, the AONK40202 ...

What you'll learn: GaN: Fast times in high-frequency power electronics. Understanding the bidirectional current capabilities of GaN. How Infineon’s integrated Schottky saves power. Gallium ...

The condition monitoring problem of power devices is significant for diagnostics and prognostics of a switched-mode power supply (SMPS) system. For power mosfet, the gate oxide degradation often ...