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In this letter, we present a multi-channel in-plane-gate field effect transistor (MC-IPGFET). In the proposed device, multiple vertically stacked two-dimensional electron gases (2DEGs) are ...
Intel announced the most dramatic change to the architecture of the transistor since the device was invented. The company will henceforth build its transistors in three dimensions, a shift that-if all ...
Posted in how-to Tagged diode-transistor logic, DTL, logic gates ← All You Need To Know About Photographic Lenses PVA Filament: Not Always What It Seems → ...
High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) ...
While DRL can be used to implement AND and OR logic gates, some types of logic gates (e.g. NOT) require an active (transistor) element, which is where DTL comes into play.
But these transistors avoided major overheating issues thanks to their smart design. Temperature rose to around 283 degrees Celsius during use—hot, but still safe for GaN-based electronics.
Swapping transistors Gallium nitride is the second most widely used semiconductor in the world, just after silicon, and its unique properties make it ideal for applications such as lighting, radar ...
In this episode of EngineeringTV Reruns, Electronic Design's Don Tuite speaks with EPC's Alex Lidow about how eGaN FETs work.
These prototype processors made from atomically thin materials offer a glimpse into a post-silicon-transistor future, but scaling challenges remain. Read the paper: A complementary two-dimensional ...
Moreover, 2-MeTHF-processed organic thin film transistors (OTFTs) based on these polymers exhibited a higher n-type transport performance. Notably, the P2 -based device afforded the maximum electron ...
Silicon-based transistors have hit a wall when it comes to shrinking their size. Alternates are the need of the hour. Image credit: SweetbunFactory/iStock How was the transistor made?
Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped ...
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