But these transistors avoided major overheating issues thanks to their smart design. Temperature rose to around 283 degrees Celsius during use—hot, but still safe for GaN-based electronics.

Shrinking silicon transistors have reached their physical limits, but a team from the University of Tokyo is rewriting the rules. They've created a cutting-edge transistor using gallium-doped ...

Researchers at the Institute of Industrial Science, The University of Tokyo, have produced a new type of transistor, which is a key component of electronics. The transistor channel was constructed ...

Microwaves can control a single quantum bit more precisely than ever before, creating a device similar to a quantum transistor – and potentially making quantum computers more reliable ...

A team of researchers from Peking University claims to have developed a non-silicon transistor that is faster and more power-efficient than the latest tech in the industry. If the claim, which is ...

In a significant advancement for semiconductor technology, researchers at UC Santa Barbara have unveiled novel three-dimensional (3D) transistors utilizing two-dimensional (2D) semiconductors. Their ...

Science Industry cpu transistor MIT's 3D nanoscale transistors use quantum tunneling design to bypass physical limits Overcoming "Boltzmann tyranny" to maybe one day enable far more efficient ...

Oct 22, 2024 Single-transistor neuron redefines efficiency in neuromorphic computing (Nanowerk Spotlight) Computing systems have made impressive progress, but they still fall short when compared to ...

Versatility: Transistors can function as both switches and amplifiers, making them highly versatile building blocks for electronic circuits. Chip Design, Transistors & Moore’s Law ...

This is not the first diamond transistor breakthrough. Another team published a study in January 2022 in the journal Nature detailing how to create diamond-based p-channel wide-bandgap transistors.

The structure of the Si-based transistors would be changed from the fin field-effect transistor (FinFET) to the cutting-edge Stacked NanoSheet/NanoWire Gate-All-Around FETs (GAAFETs) at 3 nm node ...