At the ion implantation dose of 1×10 14 ions cm-2, the current on/off ratio of N-WS 2 FET can reach 3.9×10 6. The performance of N-WS 2 FET does not deteriorate significantly after three months, ...

A new high pressure – high temperature (HPHT) generator tool developed by Dexter Magnetic Technologies, Inc. (Dexter), could lead the way to dri ...

They used two different implantation systems known as Beam line system and PIII system for ion implantation and deposited a silicon dioxide (SiO2) layer on both sides by low-pressure chemical ...

II-VI now offers the world’s most advanced ion implantation foundry services and support for state-of-the-art 150 mm diameter SiC wafers. II-VI’s ion implantation process enables highly reliable power ...