We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet ...

Details of experimental (SIMS) channeled profiles in Si(100) for MeV dopants (B, P, and As) are compared with Monte-Carlo calculations (IMSIL and SRIM) for crystalline and amorphous Si in an ion ...