We have investigated properties of Antimony implanted Si such as crystalline defect, dopant distribution, and sheet resistance before and after annealing using TEM, SIMS, and 4-point probe. The sheet ...

Contamination control in Axcelis Purion platform ion implanters Abstract: Industry consolidation in semiconductor manufacturing, driven by commoditization and decreasing margins, is placing ever ...

Coligand Effects on the Field-Induced Double Slow Magnetic Relaxation in Six-Coordinate Cobalt (II) Single-Ion Magnets (SIMs) with Positive Magnetic Anisotropy Julia Vallejo ...

We have developed a methodology that analyzes the dimensions and conformal doping profiles in fin field effect transistors (FinFET) using time-of-flight medium energy ion scattering (TOF-MEIS). The ...