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IEEE23h
High-Precision GaN-Based SenseFET Design Based on a Lumped Parameter Electro-Thermal Network Model
The thermal network part of the model is validated by the finite element method (FEM) results, and the electrical part is validated through LTspice simulation. Finally, taking a 50-finger GaN high ...
Electronic Design22h
What’s the Difference Between OTFT and Amorphous Silicon Transistors?
Organic TFTs are shaking up the display world, offering flexible new design possibilities that challenge the long-standing ...