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IEEE23h
High-Precision GaN-Based SenseFET Design Based on a Lumped Parameter Electro-Thermal Network Model
The thermal network part of the model is validated by the finite element method (FEM) results, and the electrical part is validated through LTspice simulation. Finally, taking a 50-finger GaN high ...
Electronic Design22h
What’s the Difference Between OTFT and Amorphous Silicon Transistors?
Organic TFTs are shaking up the display world, offering flexible new design possibilities that challenge the long-standing ...
Nanowerk6d
Single neuromorphic transistor integrates sensing memory and learning for efficient artificial vision
A layered transistor design combines light detection optical memory and neuromorphic processing in one unit offering compact ...
CBSSports.com4d
2025 NASCAR at Talladega odds, prediction, props, best bets: Surprising picks by model that hit 20 winners
Developed by daily Fantasy pro and SportsLine predictive data engineer Mike McClure, this proprietary NASCAR prediction model simulates every race 10,000 times, taking into account factors such as ...
Forbes3d
Why You Need To Know About The Model Context Protocol (MCP)
Forbes contributors publish independent expert analyses and insights. David Birch is a London-based advisor on digital financial services.
IEEE5d
Current Collapse in Buffer-Free GaN-on-SiC Power Transistors: Maxwell–Wagner Effect and Related Model
Abstract: Recently, the use of insulating substrates has emerged as a viable option for the fabrication of GaN power transistors exceeding 1 kV ... Accordingly, a model is defined and validated to ...
Scientific Research Publishing2d
Texas Instruments (2016) LM74610-Q1: High-Side Protection and Reverse Voltage Protection with the Smart Diode. Texas Instruments, 2015-2021.
https://www.ti.com/lit/ds/symlink/lm74610-q1.pdf?ts=1738514558032&ref_url=https%253A%252F%252Fwww.google.com%252F ...