In a review just published in Nature Materials, researchers take aim at the oldest principle in electronics: Ohm's law.

Experimental capacitance-voltage (C-V) data are presented to verify recent theories of surface minority carrier redistribution in MOS capacitors biased near strong inversion. The surface layer of ...

We propose a new Hanle-effect device based on a MOSFET type of spin transistor to reveal the dynamics of spin-polarized electron transport in the Si MOS inversion channel. The proposed device has the ...

Transition metal dichalcogenides (TMDs) have attracted much attention due to their promising optical, electronic, magnetic, and catalytic properties. Engineering the defects in TMDs represents an ...