Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents.

Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

Renesas Electronics has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems.

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 ...