Risen Energy’s mass-produced heterojunction modules have reached a cell conversion efficiency of 26.61%, a record figure for the company.

Renesas Electronics Corporation has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems, including the new 800V HVDC architecture, e-mobility charging, ...

Extending Woodward's original "Flip ON Flop OFF" for AC voltages, switching power ON and OFF using a pushbutton or a ...

Today, we continue our amd frame Project - over the coming months we are going to create a heavily customised build for AMD. Then give it away to one lucky KitGuru reader. Includes building the custom ...

Renesas Electronics has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems.

As the demand for data-intensive computing grows, so too does the need for next-generation memory technologies capable of ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

Rohm has designed a mosfet for high-current 48V hotswap controllers in data centres. RY7P250BM is a 100V device nominally rated at 300A and comes in an 8 ...

Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents.

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three new high-voltage 650V GaN FETs for AI data centers and server power supply ...