Extending Woodward's original "Flip ON Flop OFF" for AC voltages, switching power ON and OFF using a pushbutton or a ...

In this study, we have realized a monolithic silicon carbide (SiC) power integrated circuit (IC) integrating a 1.2 kV-class trench gate vertical metal-oxide-semiconductor field-effect transistor ...

Renesas Electronics has introduced three new high-voltage 650V GaN FETs for AI data centres and server power supply systems.

As the demand for data-intensive computing grows, so too does the need for next-generation memory technologies capable of ...

Renesas Electronics announced its Gen 4+ Super GaN platform, featuring 650 V, 30 milliohm gallium nitride devices for ...

Wide SOA tolerance is essential in hot-swap circuits, especially those in AI servers that experience large inrush currents.

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

Renesas Electronics Corporation (TSE:6723), a premier supplier of advanced semiconductor solutions, today introduced three ...

Power MOSFET Market Size & Growth Insights: According to the SNS Insider,“The Power MOSFET Market size was valued at USD 27.53 billion in 2024 and is expected to reach USD 48.40 billion by 2032, ...

RY7P250BM – optimized for hot-swap circuits in 48V power systems used in AI servers and industrial power supplies requiring ...

Power modules are great for high-power applications, but discrete MOSFETs offer many benefits, making them viable for the ...

A single VGaN replaces two back-to-back Si MOSFETs, reducing solution size by over ... USB port protection in mobile devices; high-side load switches in bi-directional converters; and multi-power rail ...