Now, Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC ...

This indicates that the TPH1R306P1 has lower peak ringing, reducing the voltage spike during switching. For the second test, the waveform represents the behavior of MOSFETs with an inductive load, ...

Reverse recovery and softness factor A snappy or reverse recovery occurs when a SiC diode transitions from “forward-conduction” to an “off-state.” To simplify the reverse recovery event, Figure 2 ...

These fast transitions also are necessary to produce the fast-switching waveforms needed to drive the advanced electrical motors used by many EVs, which run at speeds as high as 20,000 RPM.

[TRX Lab] has an old Heathkit model IT-1121 curve tracer, and wants to modify it so he can plot the I-V curves of MOSFETs. For the uninitiated, curve tracers are used to determine the precise chara… ...

It is clear by looking at these waveforms that the loop currents and MOSFET dv/dt are high enough to cause EMI issues if component selection and/or layout are not done correctly. Even the gate drive ...

The switching waveform of superjunction (SJ) Si-MOSFETs used in inductive load circuit was investigated. At the turn-off phase, a hump appears in the drain current. Both experiment and simulation ...

3. The C7 process has substantially reduced losses due to EOSS. In hard-switching applications such as conventional PFC topologies, E OSS energy is lost each time the MOSFET switches.