A tiny new crystal-based transistor could be the key to faster, more reliable AI chips—leaving traditional silicon designs in the dust. Credit: Shutterstock In a potential turning point for ...

Rohm has unveiled a 100 V power metal-oxide-semiconductor field-effect transistor (MOSFET) for hot-swap circuits in 48 V ...

«Our gate-all-around MOSFET containing a gallium-doped indium oxide layer achieves a high mobility of 44.5 m²/V·s. Most importantly, the device demonstrates promising reliability, operating stably ...

The RY7P250BM has also been certified as a recommended component by a leading global cloud platform provider and is expected to see broad adoption in next-generation AI servers. Its wide SOA and low ...

This was made possible by changing the “electronic state of matter on demand” through a technique known as thermal quenching.

Imec is a world-leading research and innovation center in nanoelectronics and digital technologies. Imec has more than 6.000 ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

The evolution of a high-speed current switch transistor design is described from initial design considerations through final optimization of horizontal geometry. It was found that a very narrow ...