Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

The paper presents switching process comparison among the gallium nitride (GaN) and the Superjunction (SJ) MOSFET transistors applied in the resonant switched-capacitor (SC) DC-DC converter. The ...

We introduce experimental observations of impact ionization in an n-type MOSFET of a 250 nm SiGe BiCMOS technology when operated under an aging test setup at room temperature. As expected, the ...

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