Rohm has developed a 30V N-channel MOSFET in a common-source configuration that achieves an industry-leading ON-resistance of ...

Mass production shipments of the power module have commenced from HAIMOSIC (SHANGHAI), a joint venture between ROHM and Zhenghai Group. ROHM is not only focusing on the current 4t ...

This paper describes analysis of nonlinear effects in a MOS transistor operating in moderate inversion and saturation. The dependence of the drain current on the gate-source and drain-source voltages ...

The potential of bulk silicon with classical gate oxides and poly silicon gate electrodes has not come to its end yet. This paper discusses the possibility to produce conventional MOS-Transistors on ...

The cornerstone of Complementary Metal-Oxide-Semiconductor (CMOS) technology which came to replace TTL was a type of FET known as the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).